|
Process Chamber
- Full access to front and rear chamber
-
Variable source-to-substrate distance
- Variable port locations, observation port(s)
- Process chamber
32" X 32"
(16.151 ft3)
- System footprint-70"W x 43"D x 80.5"H
(does not
include compressor or mechanical pump footprint).
Process Stations
- Substrate heating, 400＜C, 4-8-16
KW
- Selectable ramp rate, temp,
process configurable
- Electron beam 1 - 6 pocket, selectable
-
Ion beam
preclean/etch
Power Supply options
- Electron beam, 10-15 KW Solid state,
air cooled
- Fast arc suppression technology
Rotational
drive
- Adjustable ramp and speed, process
configurable
- Ferrofluidic feedthrough
-
Adjustable height and angle
Deposition
Fixturing
- Rotating domes
- Liftoff dome, optional
Pumping configuration
- Soft rough
- Cryo pump
- Cryo regeneration
function
- 16" vertical gate valve
- Cryo baffle 32K L/Sec. in the process chamber opt.
Computer control, Windows xp platform
- Host Computer Interface Unit (HCIU)
- Multitasking Windows application software
- Barcode for lot entry and recipe download
- Recipe management
- Real-time process data logging
- Real-time process information
- Interactive configurable real-time graph
- SECS - GEM HSMS compliant
- Seamless integration with production server
- Configurable for all process steps
- Reports print out in MS Excel format
- Chamber leak rate test- ELO 15" LCD Touchmonitor
Ultimate vacuum
- System 10 -9 Torr
- Chamber 10 -8 Torr
Utilities
- Water supply, 3-5 GPM
- Air supply, 85-125 psig
- 208 VAC,
3phase, 5 wire, 175 Amps
Applications
- Amplifiers
- Capacitors/Filters
- HPBT/HBT
- LED's/LASERS/Diode LASERS
- OLED's
- Ophthalmic/Optics
- Power Devices
- Processors
- R&D
- RF Microwave Diodes
- SAW
- Semiconductors
|
